Ion implantation is one of the ways in semiconductors doping. Doping is a method of increasing the conductivity of semiconductors by adding some impurity atoms to the intrinsic crystal to change its electrical properties. Impurity atoms are doped into the semiconductor to disperse the impurities in the silicon material to form a p-type or n-type semiconductor region. The main doping techniques are diffusion and ion implantation
The principle of ion implantation is similar to shooting. If the gunpowder has greater power, the bullet will get greater energy, and accelerate the speed to shot into the target. The point is: you can shoot wherever you want to shoot. The method of ion implantation is to accelerate the action of ionized dopant atoms by high voltage, use the electric field to accelerate the ion motion velocity and the magnetic field to change the direction of motion. The ionized impurities are directly driven into the silicon wafer to diffuse the impurity atoms and then enter inside of the silicon wafer.
All in all, ion implantation is a method of implanting ions with a certain energy into a solid surface, and the surface and bulk properties of the material are improved by introducing atoms into the surface layer of the solid or a specific position. Currently, ion implantation technology has been widely used in the field of physics and materials science.
In general, the structure of an ion implanter has three main components: ion source, ion accelerating tube, and a terminal station. It can also be subdivided into the following systems: ion source, analyzing magnet, accelerating system, focusing system, target chamber, vacuum system, and control system.
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